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Description
Broadband Low Noise Amplifier 0.8dB NF 50M~4GHz 18dB Gain with Bias TeePart Number: LNA50M4GBT is a high linearity, ultra low noise amplifier with integrated Bias Tee designed for operation from 50MHz to 4GHz in a small 15 16x15 16x0. 59 shielded RF enclosure (PN: 6UDD2W6S1A2). At 900 MHz, the amplifier typically provides 18 dB gain, +33 dBm OIP3 at a 54 mA bias setting, and 0. 8 dB noise figure. The LNA can be biased from a single supply +3V to +5V. The DC power is fed through output SMA connector. It combines Bias Tee
Part Number: LNA50M4GBT is a high-linearity, ultra low noise amplifier with integrated Bias Tee designed for operation from 50MHz to 4GHz in a small 15/16”x15/16”x0.59” shielded RF enclosure (PN: 6UDD2W6S1A2). At 900 MHz, the amplifier typically provides 18 dB gain, +33 dBm OIP3 at a 54 mA bias setting, and 0.8 dB noise figure. The LNA can be biased from a single supply +3V to +5V. The DC power is fed through output SMA connector. It combines Bias Tee and LNA in one with DC Power via RF output port.
Listed pictures include Product Picture and S Parameter from 50M to 4 GHz. This LNA includes the RF Enclosure as shown in picture.
Proudly Made in USA by Lotus Communication Systems, INC. in Massachusetts.
Features
- Frequency Range: 50 MHz to 4 GHz
- Noise Figure: 0.8 dB @ 900 MHz, typical >1 dB
- Gain: 18 dB Gain at 900 MHz
- Output P1dB: +22 dBm CW
- Output IP3: +33 dBm
- DC Voltage: +3 to +5V
- Operating Current: 54 mA
- Stainless Steel SMA Female Connector
- High Quality RO4350 RF PCB (very low loss and high thermal performance)
- ROHS Compliant
Applications
- Repeaters/DAS
- Mobile Infrastructure
- LTE/WCDMA/CDMA/GSM
- General Purpose Wireless
- SDR & Ham Radio
- Test Instrumentation
Resources (PDF Datasheet)
LNA50M4GBT Datasheet
Shipping Notes
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
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